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DATA SHEET
MOS FIELD EFFECT TRANSISTOR NP80N04MLG, NP80N04NLG, NP80N04PLG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP80N04MLG-S18-AY NP80N04NLG-S18-AY NP80N04PLG-E1B-AY NP80N04PLG-E2B-AY
Note Note Note Note
LEAD PLATING
PACKING Tube 50 p/tube
PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g TO-263 (MP-25ZP) typ. 1.5 g
Pure Sn (Tin) Tape 1000 p/reel
Note Pb-free (This product does not contain Pb in the external electrode.)
FEATURES
* Logic level * Built-in gate protection diode * Super low on-state resistance - NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 m MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 m MAX. (VGS = 4.5 V, ID = 35 A) - NP80N04PLG RDS(on)1 = 4.5 m MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 8.7 m MAX. (VGS = 4.5 V, ID = 35 A) * High current rating ID(DC) = 80 A * Low input capacitance Ciss = 4600 pF TYP. * Designed for automotive application and AEC-Q101 qualified
(TO-220)
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D19797EJ1V0DS00 (1st edition) Date Published May 2009 NS Printed in Japan
2009
NP80N04MLG, NP80N04NLG, NP80N04PLG
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
40 20 80 300 115 1.8 175 -55 to +175 37 137
V V A A W W C C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Repetitive Avalanche Current Repetitive Avalanche Energy
Note2 Note2
IAR EAR
Notes 1. PW 10 s, Duty Cycle 1% 2. Tch 150C, RG = 25
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.30 83.3 C/W C/W
2
Data Sheet D19797EJ1V0DS
NP80N04MLG, NP80N04NLG, NP80N04PLG
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1
TEST CONDITIONS VDS = 40 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 5 V, ID = 35 A VGS = 10 V, ID = 40 A NP80N04MLG, NP80N04NLG VGS = 10 V, ID = 40 A NP80N04PLG
MIN.
TYP.
MAX. 1 10
UNIT
A A
V S
1.4 25 64 3.8
2.5
Drain to Source On-state Resistance
4.8
m
3.3
4.5
m
RDS(on)2
VGS = 4.5 V, ID = 35 A NP80N04MLG, NP80N04NLG VGS = 4.5 V, ID = 35 A NP80N04PLG
4.9
9.0
m
4.6
8.7
m
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 20 V, ID = 40 A, VGS = 10 V, RG = 0
4600 480 310 17 18 74 8
6900 720 560 37 45 148 20 135
pF pF pF ns ns ns ns nC nC nC
VDD = 32 V, VGS = 10 V, ID = 80 A IF = 80 A, VGS = 0 V IF = 80 A, VGS = 0 V, di/dt = 100 A/s
90 13 26 0.95 39 39
1.5
V ns nC
Note Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
RL VDD
VGS VGS
Wave Form
0
10%
VGS
90%
VDS
90% 90% 10% 10%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
Data Sheet D19797EJ1V0DS
3
NP80N04MLG, NP80N04NLG, NP80N04PLG
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
120
dT - Percentage of Rated Power - %
125
PT - Total Power Dissipation - W
100 80 60 40 20 0 0 25 50 75 100 125 150 175
TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA
1000
d it e Li m V ) i0 =1
100 75 50 25 0 0 25 50 75 100 125 150 175
TC - Case Temperature - C
ID(pulse)
PW = 1i 0 0
ID - Drain Current - A
100
R
D
o S(
n) S
(V
G
ID(DC)
s
DC
1i m
i
s
ar y nd co Se
1i 0
w Po
10
ms
i
D er ip i ss io at
Br do ake
d it e im nL
1
TC = 25C Single Pulse
wn i Lim t ed
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 83.3C/W
10 Rth(ch-C) = 1.30C/W 1
0.1 Single Pulse 0.01
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
4
Data Sheet D19797EJ1V0DS
NP80N04MLG, NP80N04NLG, NP80N04PLG
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
300 250 300 250
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
ID - Drain Current - A
200 150 VGS = 4.5 V 100 50 0 0 0.5 1 1.5 2 Pulsed NP80N04MLG, NP80N04NLG
ID - Drain Current - A
10 V
10 V 200 150 VGS = 4.5 V 100 50 0 0 0.5 1 1.5 2 Pulsed NP80N04PLG
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS VGS(th) - Gate to Source Threshold Voltage - V
1000 100 Tch = -55C -25C 25C 75C 125C 150C 175C VDS = 10 V Pulsed 0 1 2 3 4
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE
3
ID - Drain Current - A
10 1 0.1 0.01 0.001 0.0001
2
1 VDS = VGS ID = 250 A -75 -25 25 75 125 175 225
0
VGS - Gate to Source Voltage - V
Tch - Channel Temperature - C
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S
100 Tch = -55C -25C 25C 75C 125C
10
150C 175C
VDS = 5 V Pulsed 1 0.1 1 10 100
ID - Drain Current - A
Data Sheet D19797EJ1V0DS
5
NP80N04MLG, NP80N04NLG, NP80N04PLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m
10 8 6 4 10 V 2 0 1 10 100 1000 Pulsed NP80N04MLG, NP80N04NLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
10 8 6 VGS = 4.5 V 4 10 V 2 0 1 10 100 1000 Pulsed NP80N04PLG
VGS = 4.5 V
ID - Drain Current - A
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m
10 8 6 4 2 NP80N04MLG, NP80N04NLG 0 0 4 8 12 16 20 ID = 40 A Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m
10 8 6 4 2 NP80N04PLG 0 0 4 8 12 16 20 ID = 40 A Pulsed
VGS - Gate to Source Voltage - V
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m
10 8 6 4 2 0 -75 -25 25 75 125 175 225 10 V, 40 A
10 8 6 4 2 0 -75 -25 25 75 125 175 225
Tch - Channel Temperature - C
VGS = 4.5 V, ID = 35 A
VGS = 4.5 V, ID = 35 A
10 V, 40 A
Pulsed NP80N04MLG, NP80N04NLG
Pulsed NP80N04PLG
Tch - Channel Temperature - C
6
Data Sheet D19797EJ1V0DS
NP80N04MLG, NP80N04NLG, NP80N04PLG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
SWITCHING CHARACTERISTICS
1000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
10000
Ciss Coss
100 td(on) 10 VDD = 20 V VGS = 10 V RG = 0 0.1 1 tr tf
td(off)
1000 VGS = 0 V f = 1 MHz 100 0.01 0.1 1 Crss
1
10
100
10
100
ID - Drain Current - A VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50 10 8 6 4 2 ID = 80 A 60 80 0 100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
VDS - Drain to Source Voltage - V
40 30 20 10 0 0
IF - Diode Forward Current - A
VDD = 32 V 20 V 8V
VDS - Drain to Source Voltage - V
100 10 1 0.1
10 V 4.5 V VGS = 0 V
VGS VDS
Pulsed 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4
20
40
QG - Gate Charge - nC
VF(S-D) - Source to Drain Voltage - V
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
100
trr - Reverse Recovery Time - ns
di/dt = 100 A/s VGS = 0 V 10 0.1 1 10 100
IF - Diode Forward Current - A
Data Sheet D19797EJ1V0DS
7
NP80N04MLG, NP80N04NLG, NP80N04PLG
PACKAGE DRAWINGS (Unit: mm)
TO-220 (MP-25K)
3.80.2
TO-262 (MP-25SK)
4.450.2 1.30.2
1.20.3
10.00.2
2.80.3
10.00.2
4.450.2 1.30.2
10.10.3
15.9 MAX.
6.30.3
4 1
3.10.2 13.70.3
4 1
13.70.3
2
3
1.270.2 0.80.1
1.270.2 0.80.1
3.10.3
2
3
8.90.2
0.50.2 2.54 TYP. 2.54 TYP.
2.50.2
0.50.2 2.54 TYP. 2.54 TYP.
2.50.2
1. Gate 2. Drain 3. Source 4. Fin (Drain)
1. Gate 2. Drain 3. Source 4. Fin (Drain)
TO-263 (MP-25ZP)
1.35 0.3
EQUIVALENT CIRCUIT
Drain
No plating
10.0 0.3 7.88 MIN. 4
4.45 0.2 1.3 0.2
Gate Body Diode
8.0 TYP.
9.15 0.3
15.25 0.5
0.5
0.025 to 0.25
Gate Protection Diode
Source
0.6 0
2.54 12 3
2.5
1. Gate 2. Drain 3. Source 4. Fin (Drain)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
8
Data Sheet D19797EJ1V0DS
2.54 0.25
0.75 0.2
.2 0 to 8 0.25
NP80N04MLG, NP80N04NLG, NP80N04PLG
TAPE INFORMATION (NP80N04PLG)
There are two types (-E1B, -E2B) of taping depending on the direction of the device.
Draw-out side
Reel side
-E1B TYPE
-E2B TYPE
MARKING INFORMATION
NEC 80N04 LG
Pb-free plating marking Abbreviation of part number Lot code
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method Infrared reflow NP80N04PLG
Soldering Conditions Maximum temperature (Package's surface temperature): 260C or below Time at maximum temperature: 10 seconds or less Time of temperature higher than 220C: 60 seconds or less Preheating time at 160 to 180C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Recommended Condition Symbol IR60-00-3
Wave soldering NP80N04MLG, NP80N04NLG Partial heating NP80N04MLG, NP80N04NLG, NP80N04PLG
Maximum temperature (Solder temperature): 260C or below Time: 10 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less Maximum temperature (Pin temperature): 350C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less
THDWS
P350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D19797EJ1V0DS
9
NP80N04MLG, NP80N04NLG, NP80N04PLG
* The information in this document is current as of May, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC Electronics products are not taken measures to prevent radioactive rays in the product design. When customers use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in order to avoid risks of the damages to property (including public or social property) or injury (including death) to persons, as the result of defects of NEC Electronics products. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E0904E

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